STFH24N60M2 STMicroelectronics

STFH24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code V T R max I DS Jmax DS(on) D STFH24N60M2 650 V 0.19 18 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected Wide creepage distance of 4.25 mm between the pins Applications Switching applications LLC converters, resonant converters Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET D(2) developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. G(1) The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STFH24N60M2 24N60M2 TO-220FP wide creepage Tube June 2016 DocID029415 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STFH24N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP wide creepage package information ................................ 9 5 Revision history ............................................................................ 11 2/12 DocID029415 Rev 2