Product Information

STFU11N65M2

STFU11N65M2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 650 V, 0.60 Ohm typ 7 A MDmesh M2 Power MOSFET in TO-220FP ultra narro
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.9451 ea
Line Total: USD 4.95

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
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STFU11N65M2
STMicroelectronics

1 : USD 4.9451
10 : USD 1.7813
25 : USD 1.6984

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Additional Infomation About Product

STFU11N65M2 Datasheet N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features V R max. I Order code DS DS(on) D STFU11N65M2 650 V 0.68 7 A Extremely low gate charge 3 Excellent output capacitance (C ) profile OSS 2 1 100% avalanche tested TO-220FP Zener-protected ultra narrow leads D(2) Applications Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1 no tab Product status link STFU11N65M2 Product summary Order code STFU11N65M2 Marking 11N65M2 TO-220FP Package ultra narrow leads Packing Tube DS12086 - Rev 2 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STFU11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 7 C (1) I A D Drain current (continuous) at T = 100 C 4.4 C (2) I Drain current (pulsed) 28 A DM P Total power dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 dv/dt Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Limited by maximum junction temperature. 2. Pulse width limited by T max. J 3. I 7 A, di/dt = 400 A/s, V (peak) < V , V = 400 V. SD DS (BR)DSS DD 4. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max) 1.5 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 110 mJ AS J D AR DD DS12086 - Rev 2 page 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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