Product Information

STFW40N60M2

STFW40N60M2 electronic component of STMicroelectronics

Datasheet
N-Channel 600 V 34A (Tc) 63W (Tc) Through Hole TO-3PF
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.912 ea
Line Total: USD 9.91

37 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
37 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STFW40N60M2
STMicroelectronics

1 : USD 9.912
10 : USD 8.6378
25 : USD 8.1951
60 : USD 7.7659
120 : USD 7.3367

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 typ., 34 A MDmesh M2 2 Power MOSFETs in TO-220FP, I PAKFP and TO-3PF packages Datasheet production data Features Order codes V T R max I DS Jmax DS(on) D STF40N60M2 STFI40N60M2 650 V 0.088 34 A 3 2 1 STFW40N60M2 1 2 3 TO-220FP 2 I PAKFP (TO-281) Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected Applications Switching applications LLC converters, resonant converters TO-3PF Description Figure 1. Internal schematic diagram These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high * efficiency converters. 6 AM01476v1 Table 1. Device summary Order code Marking Packages Packing STF40N60M2 TO-220FP 2 STFI40N60M2 40N60M2 I PAKFP (TO-281) Tube STFW40N60M2 TO-3PF September 2016 DocID026364 Rev 2 1/18 This is information on a product in full production. www.st.comContents STF40N60M2, STFI40N60M2, STFW40N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package information 10 4.1 TO-220FP, package information .11 2 4.2 I PAKFP (TO-281) package information . 13 4.3 TO-3PF, package information 15 5 Revision history . 17 2/18 DocID026364 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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