Product Information

STGW30N120KD

Name: STGW30N120KD
Brand: STMicroelectronics
SKU: STGW30N120KD_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGW30N120KD electronic component of STMicroelectronics

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Datasheet

IGBT Transistors 30 A - 1200 V Rugged IGBT

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.6557 ea
Line Total: USD 2.66

0 - Global Stock

MOQ: 1 Multiples: 600
Pack Size: 600

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 23 May to Wed. 29 May MOQ : 1 Multiples : 600 STGW30N120KD STMicroelectronics	1 : USD 2.6557 25 : USD 2.5761 200 : USD 2.2308

0 - WHS 2 Ships to you between Thu. 23 May to Wed. 29 May MOQ : 12 Multiples : 1 STGW30N120KD STMicroelectronics	12 : USD 5.7074 25 : USD 5.6481 50 : USD 5.5888 100 : USD 3.8279

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Additional Infomation About Product

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low ON-state behavior. Table 1. Device summary Order codes Markings Package Packaging STGW30N120KD GW30N120KD TO-247 Tube STGWA30N120KD GWA30N120KD TO-247 long leads Tube February 2012 Doc ID 14394 Rev 5 1/15 www.st.com 15Contents STGW30N120KD, STGWA30N120KD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Revision history . 14 2/15 Doc ID 14394 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1200 V 1200 V
Maximum Gate Emitter Voltage +/- 25 V +/- 25 V
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Mounting Style Through Hole Through Hole
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 125 C + 125 C
Series Stgw30n120kd Stgw30n120kd
Continuous Collector Current Ic Max 60 A 60 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 600 600