X-On Electronics has gained recognition as a prominent supplier of STGW30NC60WD IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW30NC60WD IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGW30NC60WD STMicroelectronics

Name: STGW30NC60WD
Brand: STMicroelectronics
SKU: STGW30NC60WD_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STGW30NC60WD electronic component of STMicroelectronics

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Part No.	STGW30NC60WD
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors PowerMESH" IGBT
Datasheet:	STGW30NC60WD Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

37: USD 7.0031 ea
Line Total: USD 259.11

Availability - 13783
Ship by Fri. 09 May to Thu. 15 May

MOQ: 37 Multiples: 1
Pack Size: 1

STGW30NC60WD More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

98

Ship by Wed. 07 May to Fri. 09 May

MOQ : 1
Multiples : 1

1 : USD 6.916
4 : USD 4.662
11 : USD 4.41
120 : USD 4.242

13783

Ship by Fri. 09 May to Thu. 15 May

MOQ : 37
Multiples : 1

37 : USD 7.0031
39 : USD 6.6547
61 : USD 4.2575
100 : USD 3.4788
250 : USD 2.8388
600 : USD 2.765

1143

Ship by Fri. 09 May to Thu. 15 May

MOQ : 47
Multiples : 1

47 : USD 5.5023

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

IGBT Transistors IGBT Transistors

RoHS - XON

Y Y

Configuration

Single Single

Collector- Emitter Voltage VCEO Max

600 V 600 V

Collector-Emitter Saturation Voltage

2.1 V 2.1 V

Maximum Gate Emitter Voltage

+/- 20 V +/- 20 V

Gate-Emitter Leakage Current

100 nA 100 nA

Power Dissipation

200 W 200 W

Package / Case

TO - 247 - 3 TO - 247 - 3

Packaging

Tube Tube

Technology

Si Si

Mounting Style

Through Hole Through Hole

Technology

Si Si

Pd - Power Dissipation

200 W 200 W

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Stgw30nc60wd Stgw30nc60wd

Continuous Collector Current Ic Max

60 A 60 A

Brand

Stmicroelectronics Stmicroelectronics

Factory Pack Quantity :

600 600

Height

20.15 mm 20.15 mm

Length

15.75 mm 15.75 mm

Width

5.15 mm 5.15 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Igbt Transistors Igbt Transistors

Subcategory

Igbts Igbts

Taric

8541210000 8541210000

Category

Igbt Transistors Igbt Transistors

Brand Category

Stmicroelectronics Stmicroelectronics

Notes:- Show Stocked Products With Similar Attributes.

STGW30NC60WD Alternative Parts

We are delighted to provide the STGW30NC60WD from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW30NC60WD and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features High frequency operation Lower C / C ratio (no cross-conduction RES IES susceptibility) Very soft ultra fast recovery antiparallel diode Applications 3 2 1 High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced Power MESH Figure 1. Internal schematic diagram process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGW30NC60WD GW30NC60WD TO-247 Tube November 2008 Rev 5 1/14 www.st.com 14Contents STGW30NC60WD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 7 3 Test circuit . 10 4 Package mechanical data 11 5 Revision history . 13 2/14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
98 Ship by Wed. 07 May to Fri. 09 May MOQ : 1 Multiples : 1	1 : USD 6.916 4 : USD 4.662 11 : USD 4.41 120 : USD 4.242

13783 Ship by Fri. 09 May to Thu. 15 May MOQ : 37 Multiples : 1	37 : USD 7.0031 39 : USD 6.6547 61 : USD 4.2575 100 : USD 3.4788 250 : USD 2.8388 600 : USD 2.765

1143 Ship by Fri. 09 May to Thu. 15 May MOQ : 47 Multiples : 1	47 : USD 5.5023

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