Product Information

STGW30NC60WD

STGW30NC60WD electronic component of STMicroelectronics

Datasheet
IGBT Transistors PowerMESH" IGBT
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.7303 ea
Line Total: USD 5.73

5 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STGW30NC60WD
STMicroelectronics

1 : USD 5.7303
10 : USD 4.487
30 : USD 3.6193
100 : USD 3.2882
500 : USD 3.1355
1000 : USD 3.0664

164 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGW30NC60WD
STMicroelectronics

1 : USD 6.227
3 : USD 5.681
4 : USD 4.576
10 : USD 4.329
30 : USD 4.147

157 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3
Multiples : 1

Stock Image

STGW30NC60WD
STMicroelectronics

3 : USD 4.1075
10 : USD 3.7645
25 : USD 3.312
100 : USD 3.1398
250 : USD 3.077

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features High frequency operation Lower C / C ratio (no cross-conduction RES IES susceptibility) Very soft ultra fast recovery antiparallel diode Applications 3 2 1 High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced Power MESH Figure 1. Internal schematic diagram process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGW30NC60WD GW30NC60WD TO-247 Tube November 2008 Rev 5 1/14 www.st.com 14Contents STGW30NC60WD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 7 3 Test circuit . 10 4 Package mechanical data 11 5 Revision history . 13 2/14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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