STH140N8F7-2 STMicroelectronics

STH140N8F7-2 N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N8F7-2 80 V 4 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging Tape and 2 STH140N8F7-2 140N8F7 H PAK-2 reel October 2014 DocID026821 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STH140N8F7-2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuit ....................................................................................... 7 4 Package mechanical data ............................................................... 8 4.1 H2PAK-2 mechanical data ................................................................ 9 5 Packaging mechanical data .......................................................... 12 6 Revision history ............................................................................ 14 2/15 DocID026821 Rev 2