Product Information

STH140N8F7-2

STH140N8F7-2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 2.2113 ea
Line Total: USD 2211.3

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1000
Multiples : 1000

Stock Image

STH140N8F7-2
STMicroelectronics

1000 : USD 4.7812

0 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

STH140N8F7-2
STMicroelectronics

1 : USD 7.9669
10 : USD 6.8974
100 : USD 5.6512
500 : USD 4.8107

0 - WHS 3


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

STH140N8F7-2
STMicroelectronics

1 : USD 7.9669
10 : USD 6.8974
100 : USD 5.6512
500 : USD 4.8107

0 - WHS 4


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1000
Multiples : 1000

Stock Image

STH140N8F7-2
STMicroelectronics

1000 : USD 2.2113
2000 : USD 2.0475

0 - WHS 5


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STH140N8F7-2
STMicroelectronics

1 : USD 8.8804
10 : USD 3.2001
25 : USD 3.024
100 : USD 2.6304

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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STH140N8F7-2 N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N8F7-2 80 V 4 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging Tape and 2 STH140N8F7-2 140N8F7 H PAK-2 reel October 2014 DocID026821 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STH140N8F7-2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuit ....................................................................................... 7 4 Package mechanical data ............................................................... 8 4.1 H2PAK-2 mechanical data ................................................................ 9 5 Packaging mechanical data .......................................................... 12 6 Revision history ............................................................................ 14 2/15 DocID026821 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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