STH185N10F3-2 STMicroelectronics

STH185N10F3-2 Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in an HPAK-2 package Datasheet - production data Features Order code V R max. I DS DS(on) D STH185N10F3-2 100 V 4.5 m 180 A AEC-Q101 qualified Ultra low on-resistance 100% avalanche tested Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET D(TAB) developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. G(1) S(2, 3) AM01475v5 Table 1: Device summary Order code Marking Packages Packing 2 STH185N10F3-2 185N10F3 H PAK-2 Tape and reel October 2016 DocID026910 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STH185N10F3-2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID026910 Rev 3