STH22N95K5-2AG Datasheet Automotive-grade N-channel 950 V, 280 m typ., 17.5 A MDmesh K5 Power MOSFET in an HPAK-2 package Features TAB V R max. I P Order code DS DS(on) D TOT STH22N95K5-2AG 950 V 330 m 17.5 A 250 W 2 3 1 AEC-Q101 qualified Industrys lowest R x area 2 DS(on) H PAK-2 Industrys best FoM (figure of merit) Ultra-low gate charge D(TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(2,3) NCHG1DTABS23TZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH22N95K5-2AG (1) Product summary Order code STH22N95K5-2AG Marking 22N95K5 Package HPAK-2 Packing Tape and reel 1. The HTRB test was performed at 80% V in compliance with AEC-Q101 (BR)DSS rev. C. All the other tests were performed according to rev. D. DS12151 - Rev 5 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office.STH22N95K5-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 17.5 A D C I Drain current (continuous) at T = 100 C 11 A D C (1) I Drain current (pulsed) 50 A D P Total power dissipation at T = 25 C 250 W TOT C ESD Gate-source human body model (R = 1.5 k, C = 100 pF) 5 kV (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 17.5 A, di/dt 100 A/s V peak V . SD DS (BR)DSS 3. V 760 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max.) 6 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 182 mJ AS J D AR DD DS12151 - Rev 5 page 2/15