STH260N6F6-6 STMicroelectronics

STH260N6F6-6 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-6 package Datasheet - preliminary data Features Order code V R max I DS DS(on) D STH260N6F6-6 60 V 2.4 m 180 A TAB Low gate charge Very low on-resistance 7 High avalanche ruggedness 1 1 Applications 2 H PAK-6 Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) Table 1. Device summary Order code Marking Package Packaging 2 STH260N6F6-6 260N6F6 H PAK-6 Tape and reel March 2014 DocID023411 Rev 2 1/13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. Contents STH260N6F6-6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID023411 Rev 2