MOSFET - Power, Single 2 N-Channel, D PAK7 150 V, 7 m , 121 A NTBGS6D5N15MC Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G Lowers Switching Noise/EMI V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 150 V 7 m 10 V 121 A Compliant 8.7 m 8 V Typical Applications Power Tools, Battery Operated Vacuums D (TAB) UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J G (Pin 1) Parameter Symbol Value Unit DraintoSource Voltage V 150 V DSS S (Pins 2,3,4,5,6,7) GatetoSource Voltage V 20 V GS NCHANNEL MOSFET Continuous Drain Steady T = 25C I 121 A C D Current R State JC (Note 2) MARKING DIAGRAM Power Dissipation P 238 W D R (Note 2) JC Continuous Drain Steady T = 25C I 15 A AYWWZZ A D Current R State JA NTBG (Notes 1, 2) S6D5N15 2 D PAK7 Power Dissipation P 3.7 W D CASE 418AY R (Notes 1, 2) JA Pulsed Drain Current T = 25C, t = 10 s I 1800 A A p DM NTBGS6D5N15 = Specific Device Code A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J stg +175 Y = Year WW = Work Week Source Current (Body Diode) I 198 A S ZZ = Assembly Lot Number Single Pulse DraintoSource Avalanche E 180 mJ AS Energy (I = 60 A , L = 0.1 mH) L pk Lead Temperature for Soldering Purposes T 260 C L ORDERING INFORMATION (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the 2 device. If any of these limits are exceeded, device functionality should not be NTBGS6D5N15MC D PAK7 800 / assumed, damage may occur and reliability may be affected. Tape & Reel (PbFree) 2 1. Surfacemounted on FR4 board using a 1 in , 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, For information on tape and reel specifications, they are not constants and are only valid for the particular conditions noted. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: December, 2019 Rev. 0 NTBGS6D5N15MC/DNTBGS6D5N15MC THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 2) R 0.6 C/W JC JunctiontoAmbient Steady State (Note 1, 2) R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 150 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 59.62 mV/C (BR)DSS D Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 A DSS GS J V = 120 V DS T = 125C 10 A J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 379 A 2.5 3.5 4.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 9.53 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 69 A 5.5 7 m DS(on) GS D V = 8 V, I = 34 A 5.9 8.7 GS D Forward Transconductance g V = 5 V, I = 60.5 A 88 S FS DS D GateResistance R T = 25C 1.1 G A CHARGES & CAPACITANCES Input Capacitance C V = 0 V, V = 75 V, f = 1 MHz 4745 pF ISS GS DS Output Capacitance C 1370 OSS Reverse Transfer Capacitance C 10.3 RSS Total Gate Charge Q V = 10 V, V = 75 V, I = 69 A 57 nC G(TOT) GS DS D Threshold Gate Charge Q 16 G(TH) GatetoSource Charge Q 27 GS GatetoDrain Charge Q 7 GD Output Charge Q V = 10 V, V = 75 V 171 nC OSS GS DS SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t V = 10 V, V = 75 V, 34 ns d(ON) GS DS I = 69 A, R = 6 D G Rise Time t 75 r TurnOff Delay Time t 39 d(OFF) Fall Time t 6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.92 1.2 V SD GS J I = 69 A S T = 125C 0.82 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 74 ns RR GS S I = 69 A S Charge Time t 53 a Discharge Time t 22 b Reverse Recovery Charge Q 141 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2