STH272N6F7-6AG STMicroelectronics

STH272N6F7-6AG Automotive-grade N-channel 60 V, 0.95 m typ., 180 A STripFET F7 Power MOSFET in HPAK-6 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STH272N6F7-6AG 60 V 1.5 m 180 A 7 Designed for automotive applications and AEC-Q101 qualified 1 Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss 2 H PAK-6 High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH272N6F7-6AG 272N6F7 HPAK-6 Tape and reel March 2016 DocID029124 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STH272N6F7-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-6 package mechanical data .................................................. 9 4.2 HPAK-6 packing information .......................................................... 12 5 Revision history ............................................................................ 14 2/15 DocID029124 Rev 1