STH360N4F6-2 STMicroelectronics

STH360N4F6-2 N-channel 40 V, 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 package Datasheet preliminary data Features Order code V R max I DSS DS(on) D TAB (1) STH360N4F6-2 40 V < 1.25 m 180 A 1. Current limited by package 2 Low gate charge 3 1 Very low on-resistance 2 High avalanche ruggedness H PAK-2 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET 4 DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging 2 STH360N4F6-2 360N4F6 H PAK-2 Tape and reel August 2012 Doc ID 023422 Rev 1 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12 change without notice. Contents STH260N6F6-2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Package mechanical data . 6 4 Packaging mechanical data . 9 5 Revision history . 11 2/12 Doc ID 023422 Rev 1