STI24N60M2

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Q g 2 2 Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages Datasheet production data Features TAB TAB Order codes V T R max I DS Jmax DS(on) D 2 3 1 STB24N60M2 3 2 2 1 D PAK STI24N60M2 2 I PAK 650 V 0.19 18 A STP24N60M2 TAB STW24N60M2 Extremely low gate charge 3 3 2 Lower R x area vs previous generation 2 DS(on) 1 1 TO-220 Low gate input resistance TO-247 100% avalanche tested Figure 1. Internal schematic diagram Zener-protected D(2, TAB) Applications Switching applications Description G(1) These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Q . These g revolutionary Power MOSFETs associate a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and S(3) AM01476v1 gate charge. They are therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging 2 STB24N60M2 D PAK Tape and reel 2 STI24N60M2 I PAK 24N60M2 STP24N60M2 TO-220 Tube STW24N60M2 TO-247 February 2014 DocID023964 Rev 5 1/21 This is information on a product in full production. www.st.com 21Contents STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID023964 Rev 5