STI260N6F6 STMicroelectronics

STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 , 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and IPAK packages Features Order codes V R max I DSS DS(on) D TAB TAB STI260N6F6 60 V < 0.003 120 A STP260N6F6 Low gate charge 3 3 2 Very low on-resistance 2 1 1 High avalanche ruggedness IPAK TO-220 Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET 4 DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order codes Marking Package Packaging STI260N6F6 IPAK 260N6F6 Tube STP260N6F6 TO-220 January 2012 Doc ID 17467 Rev 5 1/14 www.st.com 14 Contents STI260N6F6, STP260N6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 Doc ID 17467 Rev 5