Product Information

STH3N150-2

STH3N150-2 electronic component of STMicroelectronics

Datasheet
MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 3.2426 ea
Line Total: USD 3242.6

970 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
970 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1000
Multiples : 1000

Stock Image

STH3N150-2
STMicroelectronics

1000 : USD 3.2426
2000 : USD 3.2426

434 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

STH3N150-2
STMicroelectronics

1 : USD 4.2163
10 : USD 3.5475
25 : USD 3.4765
100 : USD 3.4765
250 : USD 3.4765

1947 - Warehouse 3


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STH3N150-2
STMicroelectronics

1 : USD 3.8303
10 : USD 3.3692
30 : USD 3.0973
100 : USD 2.8214
500 : USD 2.6926
1000 : USD 2.6362

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

The STH3N150-2 with MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH is a Field Effect Transistor (FET) made by STMicroelectronics. It is a N-Channel enhancement mode power transistor with very low saturation voltage and high current handling capability. It is designed for use in robust switchmode power supplies, high efficiency low voltage DC-DC converters and automotive applications. It features 1.5 kV drain-source blocking voltage, 6 O on-resistance, and 2.5 A drain current capability. It has advanced PowerMESH structure for increased power density, improved dV/dt capability and better thermal characteristics. It is available in surface mount packaging and has RoHS compliant lead-free terminations.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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