Product Information

STL100N8F7

STL100N8F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4471 ea
Line Total: USD 0.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000

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STL100N8F7
STMicroelectronics

3000 : USD 1.9861
6000 : USD 1.9662
9000 : USD 1.9466
12000 : USD 1.9271
15000 : USD 1.9079
24000 : USD 1.8888
30000 : USD 1.8699
75000 : USD 1.8512
150000 : USD 1.8327

0 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000

Stock Image

STL100N8F7
STMicroelectronics

3000 : USD 1.5265

0 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STL100N8F7
STMicroelectronics

1 : USD 0.4471
10 : USD 0.4222
30 : USD 0.4118
50 : USD 0.4048
100 : USD 0.3996
250 : USD 0.3943
500 : USD 0.3838

0 - WHS 4


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STL100N8F7
STMicroelectronics

1 : USD 6.6857
10 : USD 2.4069
25 : USD 2.2731
100 : USD 1.9389
500 : USD 1.5934
1000 : USD 1.326
3000 : USD 1.3149

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL100N8F7 Datasheet N-channel 80 V, 5.2 m typ., 100 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max I P Order code DS DS(on) D TOT STL100N8F7 80 V 6.1 m 100 A 120 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. NG4D5678S123 Product status link STL100N8F7 Product summary Order code STL100N8F7 Marking 100N8F7 Package PowerFLAT 5x6 Packing Tape and reel DS10666 - Rev 4 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL100N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 100 A c D (1) I Drain current (continuous) at T = 100 C 71 A C D (2) (1) I Drain current (pulsed) 400 A DM (3) Drain current (continuous) at T = 25 C I 20 A D pcb (3) Drain current (continuous) at T = 100 C I 14 A D pcb (3) (2) I Drain current (pulsed) 80 A DM (1) P Total power dissipation at T = 25 C 120 W TOT C (3) P Total power dissipation at T = 25 C 4.8 W TOT pcb (4) E Single pulse avalanche energy 220 mJ AS T Operating junction temperature range C J -55 to 175 T Storage temperature range C stg 1. This value is rated according to R . thj-c 2. Pulse width limited by safe operating area. 3. This value is rated according to R . thj-pcb 4. Starting T =25 C, I =25 A, V =40 V J D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.25 C/W thj-case (1) R Thermal resistance junction-pcb 31.3 C/W thj-pcb 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 s. DS10666 - Rev 4 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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