Product Information

STL120N4F6AG

STL120N4F6AG electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3619 ea
Line Total: USD 1.36

4315 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4315 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

STL120N4F6AG
STMicroelectronics

1 : USD 1.3619
10 : USD 1.3408
25 : USD 1.3028
100 : USD 1.2646
250 : USD 1.2266
500 : USD 1.2021
1000 : USD 1.2021
3000 : USD 1.2021

2910 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 3000

Stock Image

STL120N4F6AG
STMicroelectronics

3000 : USD 1.328

4315 - WHS 3


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 6
Multiples : 1

Stock Image

STL120N4F6AG
STMicroelectronics

6 : USD 1.3619
10 : USD 1.3408
25 : USD 1.3028
100 : USD 1.2646
250 : USD 1.2266
500 : USD 1.2021

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STL120N4F6AG Automotive-grade N-channel 40 V, 2.9 m typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I DS DS(on) D STL120N4F6AG 40 V 3.6 m 55 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wettable flank package Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packaging STL120N4F6AG 120N4F6 PowerFLAT 5x6 Tape and reel March 2017 DocID027498 Rev 4 1/15 www.st.com This is information on a product in full production. Contents STL120N4F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 WF type R package information .......................... 9 4.2 PowerFLAT 5x6 WF packing information .................................... 12 5 Revision history ............................................................................ 14 2/15 DocID027498 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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