STL13NM60N STMicroelectronics

STL13NM60N N-channel 600 V, 0.320 typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V T R max. I DS jmax DS(on) D %RWWRP YLHZ 3 6 6 STL13NM60N 650 V 0.385 10 A * 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 7 +9 3RZHU)/ Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 - V Table 1. Device summary Order code Marking Packages Packaging STL13NM60N 13NM60N PowerFLAT 8x8 HV Tape and reel November 2013 DocID018870 Rev 2 1/16 This is information on a product in full production. www.st.comContents STL13NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID018870 Rev 2