Product Information

STL24N60DM2

STL24N60DM2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 1.1716 ea
Line Total: USD 3514.8

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL24N60DM2
STMicroelectronics

3000 : USD 2.9159
6000 : USD 2.8878
9000 : USD 2.8582
12000 : USD 2.8301
15000 : USD 2.8019
24000 : USD 2.7737
30000 : USD 2.7456
75000 : USD 2.7188
150000 : USD 2.6906

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STL24N60DM2
STMicroelectronics

1 : USD 9.0822
10 : USD 3.2696
25 : USD 3.088

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL24N60DM2 N-channel 600 V, 0.195 typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V T R max. I DS Jmax DS(on) D STL24N60DM2 650 V 0.220 15 A 5 4 Fast-recovery body diode 3 2 Extremely low gate charge and input 1 capacitance Low on-resistance 100% avalanche tested PowerFLAT 8x8 HV Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STL24N60DM2 24N60DM2 PowerFLAT 8x8 HV Tape and reel July 2016 DocID026017 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STL24N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT8x8 HV package information ........................................ 10 4.2 PowerFLAT8x8 HV packaging information ..................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026017 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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