Product Information

STL26NM60N

STL26NM60N electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 2.9776 ea
Line Total: USD 8932.8

2910 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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STL26NM60N
STMicroelectronics

3000 : USD 2.886

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
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Additional Infomation About Product

STL26NM60N N-channel 600 V, 0.160 typ., 19 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V R max I DS DS(on) D STL26NM60N 600 V 0.185 19 A 5 4 100% avalanche tested 3 2 Low input capacitance and gate charge 1 Low gate input resistance Applications PowerFLAT 8x8 HV Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STL26NM60N 26NM60N PowerFLAT 8x8 HV Tape and reel December 2016 DocID18472 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STL26NM60N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 8x8 HV package information ....................................... 10 4.2 PowerFLAT 8x8 HV packing information ........................................ 12 5 Revision history ............................................................................ 14 2/15 DocID18472 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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