STL45P3LLH6 STMicroelectronics

STL45P3LLH6 P-channel -30 V, 11 m typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) D STL45P3LLH6 -30 V 13 m -45 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure 1: Internal schematic diagram This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STL45P3LLH6 45P3LLH6 PowerFLAT 5x6 Tape and reel April 2016 DocID025822 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STL45P3LLH6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 package information .......................................... 10 4.2 PowerFLAT 5x6 packaging information ....................................... 12 5 Revision history ............................................................................ 14 2/15 DocID025822 Rev 1