STL4LN80K5 STMicroelectronics

STL4LN80K5 N-channel 800 V, 2.1 typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V R max. I DS DS(on) D STL4LN80K5 800 V 2.6 2 A 1 2 Industrys lowest R * area DS(on) 3 4 Industrys best FoM (figure of merit) Ultra low-gate charge 100 % avalanche tested PowerFLAT 5x6 VHV Zener-protected Applications Figure 1: Internal schematic diagram Switching applications D(5, 6, 7, 8) 8 7 6 5 Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic G(4) reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 1 2 3 4 Top View S(1, 2, 3) Table 1: Device summary Order code Marking Package Packing STL4LN80K5 4LN80K5 PowerFLAT 5x6 VHV Tape and reel October 2017 DocID027815 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STL4LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 VHV package information ................................. 10 4.2 PowerFLAT 5x6 packing information ........................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027815 Rev 2