STL50DN6F7 STMicroelectronics

STL50DN6F7 Dual N-channel 60 V, 9 m typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features Order code V R max. I DS DS(on) D STL50DN6F7 60 V 11 m 57 A Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This dual N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STL50DN6F7 50DN6F7 PowerFLAT 5x6 double island Tape and reel November 2015 DocID028132 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STL50DN6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics(curve) ......................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 PowerFLAT 5x6 double island type R package information .............. 9 4.2 PowerFLAT 5x6 packing information ........................................... 12 5 Revision history ............................................................................ 14 2/15 DocID028132 Rev 2