STL4N80K5 STMicroelectronics

STL4N80K5 N-channel 800 V, 2.1 typ., 2.5 A MDMesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet production data Features Order code V R I DS DS(on)max. D STL4N80K5 800 V 2.5 2.5 A Industrys lowest R x area DS(on) 1 Industrys best figure of merit (FoM) 2 3 Ultra low gate charge 4 100% avalanche tested PowerFLAT 5x6 VHV Zener protected Applications Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 7 6 5 Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical G(4) structure. The result is a dramatic reduction in on- resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 12 3 4 Top View S(1, 2, 3) AM15540v1 Table 1. Device summary Order code Marking Package Packaging STL4N80K5 4N80K5 PowerFLAT 5x6 VHV Tape and reel May 2015 DocID025574 Rev 2 1/17 This is information on a product in full production. www.st.comContents STL4N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 16 2/17 DocID025574 Rev 2