STL8N10F7 STMicroelectronics

STL8N10F7 N-channel 100 V, 17 m typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL8N10F7 100 V 20 m 8 A 2.9 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Description Figure 1: Internal schematic diagram This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL8N10F7 8N10F PowerFLAT 3.3x3.3 Tape and reel November 2017 DocID025076 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STL8N10F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PoweFLAT 3.3x3.3 pakage information .......................................... 10 5 Revision history ............................................................................ 13 2/14 DocID025076 Rev 3