Product Information

STL8N10F7

STL8N10F7 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.4083 ea
Line Total: USD 1224.9

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

Stock Image

STL8N10F7
STMicroelectronics

3000 : USD 0.7262
6000 : USD 0.6724

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

Stock Image

STL8N10F7
STMicroelectronics

3000 : USD 0.6765

0 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STL8N10F7
STMicroelectronics

1 : USD 3.6505
10 : USD 1.3701
100 : USD 1.0222

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Ciss - Input Capacitance
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL8N10F7 N-channel 100 V, 17 m typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL8N10F7 100 V 20 m 8 A 2.9 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Description Figure 1: Internal schematic diagram This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL8N10F7 8N10F PowerFLAT 3.3x3.3 Tape and reel November 2017 DocID025076 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STL8N10F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PoweFLAT 3.3x3.3 pakage information .......................................... 10 5 Revision history ............................................................................ 13 2/14 DocID025076 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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