Product Information

STLD125N4F6AG

STLD125N4F6AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.85 ea
Line Total: USD 5.85

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 2500
Multiples : 1

Stock Image

STLD125N4F6AG
STMicroelectronics

2500 : USD 2.5109
3000 : USD 2.4854
4000 : USD 2.4612
5000 : USD 2.4371
6000 : USD 2.4116
10000 : USD 2.3874
20000 : USD 2.3646
25000 : USD 2.3405
50000 : USD 2.3177

0 - WHS 2


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STLD125N4F6AG
STMicroelectronics

1 : USD 5.85
10 : USD 2.1142
25 : USD 1.9911
100 : USD 1.7037
500 : USD 1.3958
1000 : USD 1.1597
2500 : USD 1.1084

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
LoadingGif

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STLD125N4F6AG Automotive-grade N-channel 40 V, 2.4 m typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 DSC Datasheet - production data Features Order code V R max. I DS DS(on) D STLD125N4F6AG 40 V 3.0 m 120 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wettable flank package Applications Figure 1: Internal schematic diagram Switching applications D(5, 6, 7, 8) Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) G(4) packages. S(1, 2, 3) AM15540V4 Table 1: Device summary Order code Marking Package Packaging STLD125N4F6AG 125 PowerFLAT 5x6 dual side cooling Tape and reel July 2017 DocID029009 Rev 4 1/13 www.st.com This is information on a product in full production. Contents STLD125N4F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 dual side cooling package information ................ 9 4.2 PowerFLAT 5x6 dual side cooling packing information ............... 11 5 Revision history ............................................................................ 12 2/13 DocID029009 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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