STN3P6F6 STMicroelectronics

STN3P6F6 P-channel -60 V, 0.13 typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package Datasheet - production data Features Order code V R max. I DS DS(on) D STN3P6F6 -60 V 0.16 -3 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Figure 1: Internal schematic diagram Switching applications Description D(2, 4) This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. G(1) S(3) Int schem P ch nTnZ SOT 223 Table 1: Device summary Order code Marking Package Packing STN3P6F6 3P6F6 SOT-223 Tape and reel October 2016 DocID023758 Rev 5 1/13 www.st.com This is information on a product in full production. Contents STN3P6F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID023758 Rev 5