Product Information

STN3PF06

Name: STN3PF06
Brand: STMicroelectronics
SKU: STN3PF06_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STN3PF06 electronic component of STMicroelectronics

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Datasheet

MOSFET P-Ch 60 Volt 2.5 Amp

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5265 ea
Line Total: USD 0.53

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 1 Multiples : 1 STN3PF06 STMicroelectronics	1 : USD 0.5265 10 : USD 0.5207 125 : USD 0.4739 750 : USD 0.3685 1500 : USD 0.3335 2500 : USD 0.3218

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Additional Infomation About Product

STN3PF06 P-channel 60 V - 0.20 - 2.5 A - SOT-223 STripFET II Power MOSFET Features R DS(on) Type V I DSS D max 2 STN3PF06 60 V < 0.22 2.5 A 3 Extremely dv/dt capability 2 1 100% avalanche tested SOT-223 Application oriented characterization Application Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STN3PF06 N3PF06 SOT-223 Tape and reel March 2008 Rev 4 1/12 www.st.com 12Contents STN3PF06 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Revision history . 11 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 2.5 A 2.5 A
Vds - Drain-Source Breakdown Voltage - 60 V - 60 V
Rds On - Drain-Source Resistance 200 mOhms 200 mOhms
Transistor Polarity P - Channel P - Channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2.5 W 2.5 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 223 - 3 SOT - 223 - 3
Packaging Reel Reel
Channel Mode Enhancement Enhancement
Configuration Single Dual Drain Single Dual Drain
Series P - Channel Stripfet P - Channel Stripfet
Brand Stmicroelectronics Stmicroelectronics
Forward Transconductance - Min 1.5 S 1.5 S
Fall Time 17 ns 17 ns
Rise Time 40 ns 40 ns
Factory Pack Quantity : 4000 4000
Typical Turn-Off Delay Time 40 ns 40 ns