Product Information

STP11NK50Z

STP11NK50Z electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 500V; 6.3A; 125W; TO220-3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9507 ea
Line Total: USD 0.95

29 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
29 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STP11NK50Z
STMicroelectronics

1 : USD 0.9507
10 : USD 0.9306
30 : USD 0.9164
100 : USD 0.9023

766 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STP11NK50Z
STMicroelectronics

1 : USD 1.755
3 : USD 1.599
10 : USD 1.443
14 : USD 1.209
37 : USD 1.144

23025 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 11
Multiples : 1

Stock Image

STP11NK50Z
STMicroelectronics

11 : USD 1.7125
25 : USD 1.5872
100 : USD 1.4131
250 : USD 1.2974
500 : USD 1.2467
1000 : USD 1.2218

Read More Specifications

     
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
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Additional Infomation About Product

STB11NK50Z - STP11NK50ZFP STP11NK50Z 2 N-channel 500 V, 0.48 , 10 A TO-220, TO-220FP, D PAK TM Zener-protected SuperMESH Power MOSFET Features R DS(on) Type V I Pw DSS D max STB11NK50Z 500 V < 0.52 10 A 125 W 3 3 2 2 1 1 STP11NK50ZFP 500 V < 0.52 10 A 30 W TO-220FP TO-220 STP11NK50Z 500 V < 0.52 10 A 125 W Extremely high dv/dt capability 3 1 100% avalanche tested 2 D PAK Gate charge minimized Very low intrinsic capacitances Application Switching applications Figure 1. Internal schematic diagram Description The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB11NK50ZT4 B11NK50Z DPAK Tape and reel STP11NK50ZFP P11NK50ZFP TO-220FP Tube STP11NK50Z P11NK50Z TO-220 Tube May 2008 Rev 6 1/16 www.st.com 16Contents STB11NK50Z - STP11NK50ZFP - STP11NK50Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) . 7 3 Test circuit . 10 4 Package mechanical data 11 5 Packaging mechanical data . 15 6 Revision history . 16 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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