STP11NM60FP STMicroelectronics

STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 2 2 N-channel 650V T - 0.4 - 11A TO-220/FP/D PAK/I PAK Jmax MDmesh Power MOSFET General features V DSS Type R I DS(on) D ( T =T ) J Jmax 3 3 2 2 1 1 STP11NM60 650V <0.45 11A TO-220 TO-220FP STP11NM60FP 650V <0.45 11A STB11NM60 650V <0.45 11A STB11NM60-1 650V <0.45 11A High dv/dt and avalanche capabilities 3 3 2 1 1 100% avalanche tested 2 2 i PAK D PAK Low input capacitance and gate charge Low gate input resistance Internal schematic diagram Description The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. Applications Switching application Order codes Part number Marking Package Packaging STB11NM60T4 B11NM60 DPAK Tape & reel STB11NM60-1 B11NM60-1 IPAK Tube STP11NM60 P11NM60 TO-220 Tube STP11NM60FP P11NM60FP TO-220FP Tube January 2007 Rev 6 1/16 www.st.com 16Contents STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 15 2/16