Product Information

STP120N4F6

STP120N4F6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6294 ea
Line Total: USD 1.63

5820 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

STP120N4F6
STMicroelectronics

1 : USD 1.6294
10 : USD 1.3691
50 : USD 1.1401
100 : USD 1.0726
500 : USD 1.0216
1000 : USD 1.0201
2000 : USD 0.9997
5000 : USD 0.9997
10000 : USD 0.9997

5820 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 8
Multiples : 1

Stock Image

STP120N4F6
STMicroelectronics

8 : USD 1.6294
10 : USD 1.3691
50 : USD 1.1401
100 : USD 1.0726
500 : USD 1.0216
1000 : USD 1.0201
2000 : USD 0.9997

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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STP120N4F6 N-channel 40 V, 3.8 m , 80 A, TO-220 STripFET VI DeepGATE Power MOSFET Features R DS(on) Order code V I DSS D max. (1) STP120N4F6 40 V 4.3 m 80 A 1. Current limited by package 3 Standard threshold drive 2 1 100% avalanche tested TO-220 Application Switching applications Automotive Figure 1. Internal schematic diagram Description This device is a 40 V N-channel STripFET VI OR 4 Power MOSFET based on the STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging STP120N4F6 120N4F6 TO-220 Tube May 2011 Doc ID 018846 Rev 1 1/13 www.st.com 13Contents STP120N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data 10 5 Revision history . 13 2/13 Doc ID 018846 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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