STP12N50M2 STMicroelectronics

STP12N50M2 N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Q g Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code V R max I DS DS(on) D % STP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower R x area vs previous generation DS(on) Low gate input resistance 100% avalanche tested 2 7 Zener-protected Applications Switching applications Figure 1. Internal schematic diagram , TAB Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh technology: MDmesh II Plus low Q . This g revolutionary Power MOSFET associates a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. AM15572v1 . Table 1. Device summary Order code Marking Package Packaging STP12N50M2 12N50M2 TO-220 Tube June 2014 DocID026516 Rev 1 1/13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. 7 Contents STP12N50M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID026516 Rev 1