STP12N65M2 STMicroelectronics

STP12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STP12N65M2 650 V 0.50 8 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 3 2 100% avalanche tested 1 Zener-protected TO-220 Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STP12N65M2 12N65M2 TO-220 Tube November 2017 DocID031324 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STP12N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID031324 Rev 1