STP12NK30Z STMicroelectronics

STP12NK30Z N-CHANNEL 300V - 0.36 -9A- TO-220 Zener-Protected SuperMESHPower MOSFET TYPE V R I (1) Pw (1) DSS DS(on) D STP12NK30Z 300 V < 0.4 9A 90W TYPICAL R (on) = 0.36 DS EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 3 100% AVALANCHE RATED 2 1 GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220 VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS LIGHTING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC HIGH CURRENT, HIGH SPEED SWITCHING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP12NK30Z P12NK30Z TO-220 TUBE December 2002 1/8STP12NK30Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 300 V DS GS V Drain-gate Voltage (R =20k) 300 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C A 9 D C Drain Current (continuous) at T = 100C 5.6 A C I (1) Drain Current (pulsed) 36 A DM P Total Dissipation at T = 25C 90 W TOT C Derating Factor 0.72 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 3000 V/ns ESD(G-S) dv/dt (2) Peak Diode Recovery voltage slope 4.5 V/ns T Storage Temperature stg 55 to 150 C T Max. Operating Junction Temperature j THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.38 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T l Maximum Lead Temperature For Soldering Purpose 300 C Note: 1. Pulse width limited by safe operating area 2. I < 9A, di/dt<300A/s, V <V ,T <T SD DD (BR)DSS J JMAX AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 9A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 155 mJ AS (starting T = 25 C, I =I ,V =50V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8