STP160N4LF6 STMicroelectronics

STP160N4LF6 N-channel 40 V, 0.0021 m typ., 120 A, STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max I P DS DS(on) D TOT TAB STP160N4LF6 40 V 0.0029 120 A 150 W R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) Logic level drive 3 2 1 High avalanche ruggedness TO-220 100% avalanche tested Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. * DS(on) 6 0 Y Table 1. Device summary Order code Marking Package Packaging STP160N4LF6 160N4LF6 TO-220 Tube April 2014 DocID026266 Rev 1 1/14 This is information on a product in full production. www.st.comContents STP160N4LF6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Revision history . 13 2/14 DocID026266 Rev 1