Product Information

STP18N60DM2

STP18N60DM2 electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.5294 ea
Line Total: USD 1529.4

0 - Global Stock
MOQ: 1000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1000
Multiples : 1

Stock Image

STP18N60DM2
STMicroelectronics

1000 : USD 2.1008
2000 : USD 2.0797
2500 : USD 2.0589
3000 : USD 2.0384
4000 : USD 2.018
5000 : USD 1.9978
10000 : USD 1.9778
20000 : USD 1.9581
50000 : USD 1.9384

0 - WHS 2


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

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STP18N60DM2
STMicroelectronics

1 : USD 2.3384
10 : USD 1.9341
30 : USD 1.6427
100 : USD 1.4017
500 : USD 1.3589
1000 : USD 1.3388

0 - WHS 3


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STP18N60DM2
STMicroelectronics

1 : USD 7.5863
10 : USD 2.7353
25 : USD 2.575

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STP18N60DM2 Datasheet N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Features V R max. I Order code DS DS(on) D TAB STP18N60DM2 600 V 0.295 12 A Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 TO-220 Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STP18N60DM2 Product summary Order code STP18N60DM2 Marking 18N60DM2 Package TO-220 Packing Tube DS10960 - Rev 5 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STP18N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D case I Drain current (continuous) at T = 100 C 7.6 A D case (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) dv/dt Peak diode recovery voltage slope 40 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range C stg 55 to 150 T Operating junction temperature range C j 1. Pulse width is limited by safe operating area. 2. I 12, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 380 mJ AR (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10960 - Rev 5 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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