Product Information

STP190N55LF3

STP190N55LF3 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch, 55V-2.9ohms 120A

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.1245 ea
Line Total: USD 7.12

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1000
Multiples : 1

Stock Image

STP190N55LF3
STMicroelectronics

1000 : USD 4.8554
2000 : USD 4.8071
2500 : USD 4.7588
3000 : USD 4.7118
4000 : USD 4.6636
5000 : USD 4.618
10000 : USD 4.5711
20000 : USD 4.5254
50000 : USD 4.4799

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STP190N55LF3
STMicroelectronics

1 : USD 11.271
10 : USD 9.754
100 : USD 7.9919
500 : USD 6.8034
1000 : USD 6.5202

0 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 9
Multiples : 1

Stock Image

STP190N55LF3
STMicroelectronics

9 : USD 3.861
20 : USD 3.718
75 : USD 3.718
200 : USD 3.575
750 : USD 3.575

0 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1000
Multiples : 1000

Stock Image

STP190N55LF3
STMicroelectronics

1000 : USD 3.5785

0 - WHS 5


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STP190N55LF3
STMicroelectronics

1 : USD 7.1245
10 : USD 4.6689
25 : USD 4.4126
100 : USD 3.822
500 : USD 3.2537
1000 : USD 2.8414

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Technology
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Vgs - Gate-Source Voltage
Channel Mode
Qualification
Tradename
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Series
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
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Cnhts
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Taric
Typical Turn-On Delay Time
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STP190N55LF3 N-channel 55 V, 2.9 m, 120 A, TO-220 STripFET Power MOSFET Features R DS(on) Type V I P DSS D D max STP190N55LF3 55 V < 3.7 m 120 A 312 W Logic level drive 100% avalanche tested 3 2 1 Application TO-220 Switching applications Automotive Description Figure 1. Internal schematic diagram This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique single feature size strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STP190N55LF3 190N55LF3 TO-220 Tube November 2008 Rev 1 1/12 www.st.com 12Contents STP190N55LF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 8 4 Package mechanical data . 9 5 Revision history . 11 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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