STP190N55LF3 STMicroelectronics

STP190N55LF3 N-channel 55 V, 2.9 m, 120 A, TO-220 STripFET Power MOSFET Features R DS(on) Type V I P DSS D D max STP190N55LF3 55 V < 3.7 m 120 A 312 W Logic level drive 100% avalanche tested 3 2 1 Application TO-220 Switching applications Automotive Description Figure 1. Internal schematic diagram This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique single feature size strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STP190N55LF3 190N55LF3 TO-220 Tube November 2008 Rev 1 1/12 www.st.com 12Contents STP190N55LF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 8 4 Package mechanical data . 9 5 Revision history . 11 2/12