Product Information

STP20NM65N

Name: STP20NM65N
Brand: STMicroelectronics
SKU: STP20NM65N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STP20NM65N electronic component of STMicroelectronics

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MOSFET N-Channel 650V Pwr Mosfet

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

7: USD 1.3268 ea
Line Total: USD 9.29

0 - Global Stock

MOQ: 7 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 1000 Multiples : 1000 STP20NM65N STMicroelectronics	1000 : USD 3.7066

0 - WHS 2 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 1000 Multiples : 1 STP20NM65N STMicroelectronics	1000 : USD 2.8127

0 - WHS 3 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 7 Multiples : 1 STP20NM65N STMicroelectronics	7 : USD 1.3268

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Additional Infomation About Product

STP20NM65N STF20NM65N N-channel 650 V, 0.250 , 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features V R DSS DS(on) Order codes I D T max. jmax STP20NM65N 710 V 0.270 15 A STF20NM65N 3 3 100 % avalanche tested 2 2 1 1 Low input capacitance and gate charge TO-220 TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STP20NM65N 20NM65N TO-220 Tubes STF20NM65N 20NM65N TO-220FP Tubes May 2011 Doc ID 13845 Rev 2 1/16 www.st.com 16Contents STP20NM65N, STF20NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristecs (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 13845 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 18 A 18 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 190 mOhms 190 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 25 V 25 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 160 W 160 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Stp20nm65n Stp20nm65n
Brand Stmicroelectronics Stmicroelectronics
Fall Time 20 ns 20 ns
Rise Time 10 ns 10 ns
Factory Pack Quantity : 1000 1000
Typical Turn-Off Delay Time 80 ns 80 ns