STP20NM65N STMicroelectronics

STP20NM65N STF20NM65N N-channel 650 V, 0.250 , 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features V R DSS DS(on) Order codes I D T max. jmax STP20NM65N 710 V 0.270 15 A STF20NM65N 3 3 100 % avalanche tested 2 2 1 1 Low input capacitance and gate charge TO-220 TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging STP20NM65N 20NM65N TO-220 Tubes STF20NM65N 20NM65N TO-220FP Tubes May 2011 Doc ID 13845 Rev 2 1/16 www.st.com 16Contents STP20NM65N, STF20NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristecs (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 13845 Rev 2