STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.150 , 17 A MDmesh V Power MOSFET DPAK, TO-220FP, TO-220, IPAK, TO-247 Features V R DSS DS(on) Order codes I P D W T max Jmax 3 2 3 1 STB21N65M5 17 A 125 W 2 1 (1) TO-220 STF21N65M5 17 A 30 W IPAK STI21N65M5 710 V < 0.179 STP21N65M5 17 A 125 W STW21N65M5 3 2 3 3 1 1 2 1. Limited only by maximum temperature allowed 1 DPAK TO-247 TO-220FP Worldwide best R * area DS(on) Higher V rating DSS High dv/dt capability Excellent switching performance Figure 1. Internal schematic diagram 100% avalanche tested Application Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is 3 combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The - V resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB21N65M5 DPAK Tape and reel STF21N65M5 TO-220FP Tube STI21N65M5 21N65M5 IPAK Tube STP21N65M5 TO-220 Tube STW21N65M5 TO-247 Tube May 2011 Doc ID 15427 Rev 4 1/22 www.st.com 22Contents STB/F/I/P/W21N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 17 2/22 Doc ID 15427 Rev 4