STP265N6F6AG STMicroelectronics

STP265N6F6AG Automotive-grade N-channel 60 V, 2.3 m typ., 180 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max I DS DS(on) D STP265N6F6AG 60 V 2.85 m 180 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB) This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. G(1) S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STP265N6F6AG 265N6F6 TO-220 Tube November 2016 DocID027281 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STP265N6F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 mechanical data ................................................................. 10 5 Revision history ............................................................................ 12 2/13 DocID027281 Rev 3