STP26N60M2 STMicroelectronics

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB V R DS DS(on) Order code ID PTOT T max. Jmax STP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 3 3 2 2 1 Extremely low gate charge 1 Excellent output capacitance (COSS) profile 100% avalanche tested TO-247 TO-220 Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STP26N60M2 TO-220 26N60M2 Tube STW26N60M2 TO-247 March 2017 DocID028178 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STP26N60M2, STW26N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 4.2 TO-247 package information ........................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028178 Rev 2