STP30N10F7 STMicroelectronics

STP30N10F7 N-channel 100 V, 0.02 typ., 32 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features P Order code V R max. I TOT DS DS(on) D 50 W STP30N10F7 100 V 0.024 32 A Among the lowest R on the market DS(on) Excellent figure of merit (FOM ) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes D(2, TAB) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(1) S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STP30N10F7 30N10F7 TO-220 Tube February 2016 DocID028799 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STP30N10F7 Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history .............................................................................. 12 2/13 DocID028799 Rev 1