STP36N55M5 STMicroelectronics

STP36N55M5 STW36N55M5 N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages Datasheet production data Features V R DSS DS(on) Order codes I D T max Jmax TAB STP36N55M5 600 V < 0.08 33 A STW36N55M5 3 3 Worldwide best R * area DS(on) 2 2 1 1 Higher V rating and high dv/dt capability DSS TO-220 TO-247 Excellent switching performance 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description 4 These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- 3 based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. - V Table 1. Device summary Order codes Marking Package Packaging STP36N55M5 TO-220 36N55M5 Tube STW36N55M5 TO-247 October 2012 Doc ID 022902 Rev 2 1/15 This is information on a product in full production. www.st.com 15Contents STP36N55M5, STW36N55M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 14 2/15 Doc ID 022902 Rev 2