STP315N10F7 STMicroelectronics

STP315N10F7 Automotive-grade N-channel 100 V, 2.3 m typ., 180 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I DS DS(on)max D STP315N10F7 100 V 2.7 m 180 A Features Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced G(1) trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packaging STP315N10F7 315N10F7 TO-220 Tube August 2016 DocID025348 Rev 4 1/13 www.st.com This is information on a product in full production. Contents STP315N10F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information data ............................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID025348 Rev 4