Product Information

STP4N90K5

STP4N90K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in a TO-220 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

31: USD 1.04 ea
Line Total: USD 32.24

970 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 31  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
485 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 30
Multiples : 1

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STP4N90K5
STMicroelectronics

30 : USD 1.092
40 : USD 1.092
150 : USD 1.092
500 : USD 1.092
2000 : USD 1.092

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Numofpackaging
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STP4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STP4N90K5 900 V 2.10 3 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 3 2 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP4N90K5 4N90K5 TO-220 Tube November 2016 DocID029953 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STP4N90K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 package information ........................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID029953 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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