STP4N90K5 STMicroelectronics

STP4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STP4N90K5 900 V 2.10 3 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 3 2 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP4N90K5 4N90K5 TO-220 Tube November 2016 DocID029953 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STP4N90K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 package information ........................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID029953 Rev 1