STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packages Datasheet - production data Features Order codes V R P I DS DS(on) max. TOT D STP4NK60Z TAB 600 V 2 70 W 4 A STP4NK60ZFP 100% avalanche tested 3 3 2 2 1 1 Very low intrinsic capacitances TO-220 TO-220FP Zener-protected Applications Switching applications Figure 1. Internal schematic diagram Description D(2, TAB) These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well G(1) established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Packages Packaging STP4NK60Z P4NK60Z TO-220 Tube STP4NK60ZFP P4NK60ZFP TO-220FP January 2014 DocID025020 Rev 2 1/16 This is information on a product in full production. www.st.comContents STP4NK60Z, STP4NK60ZFP Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 DocID025020 Rev 2