Product Information

STP4NK80Z

STP4NK80Z electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; TO220-3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3696 ea
Line Total: USD 1.37

93 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
93 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STP4NK80Z
STMicroelectronics

1 : USD 1.3696
10 : USD 1.0013
50 : USD 0.7364
100 : USD 0.6587
500 : USD 0.6239
1000 : USD 0.6087

116 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STP4NK80Z
STMicroelectronics

1 : USD 1.2742
3 : USD 1.0824
10 : USD 0.9188
20 : USD 0.8464
55 : USD 0.8007

2759 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 9
Multiples : 1

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STP4NK80Z
STMicroelectronics

9 : USD 0.9463
10 : USD 0.9363
500 : USD 0.9175

Read More Specifications

     
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
LoadingGif

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Additional Infomation About Product

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH MOSFET General features V DSS Type R I DS(on) D ( Tjmax) 3 2 STP4NK80Z 800 V < 3.5 3 A 1 STP4NK80ZFP 800 V < 3.5 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 3 A STD4NK80Z-1 800 V < 3.5 3 A Extremely high dv/dt capability 3 3 2 1 1 100% avalanche tested DPAK IPAK Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility Internal schematic diagram Description The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications Switching application Order codes Part number Marking Package Packaging STP4NK80Z P4NK80Z TO-220 Tube STP4NK80ZFP P4NK80ZFP TO-220FP Tube STD4NK80ZT4 D4NK80Z DPAK Tape & reel STD4NK80Z-1 D4NK80Z IPAK Tube August 2006 Rev 8 1/18 www.st.com 18Contents STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Contents 1 Electrical ratings 3 1.1 Protection features of gate-to-source zener diodes 4 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuit . 10 4 Package mechanical data 11 5 Packaging mechanical data 16 6 Revision history . 17 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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