Product Information

STP6N62K3

STP6N62K3 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 620V; 3A; 30W; TO220-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0602 ea
Line Total: USD 1.06

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STP6N62K3
STMicroelectronics

1 : USD 1.3104
10 : USD 1.1781
100 : USD 0.9513
500 : USD 0.7812
1000 : USD 0.6489

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 50
Multiples : 50

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STP6N62K3
STMicroelectronics

50 : USD 1.1776
200 : USD 1.134
750 : USD 1.0904
1500 : USD 1.0904
3750 : USD 1.0904

0 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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STP6N62K3
STMicroelectronics

1 : USD 5.2817
10 : USD 1.9056
25 : USD 1.7916

0 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STP6N62K3
STMicroelectronics

1 : USD 1.162
3 : USD 1.05
10 : USD 0.924
20 : USD 0.756
53 : USD 0.714

0 - WHS 5


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1000
Multiples : 1000

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STP6N62K3
STMicroelectronics

1000 : USD 0.6601
2000 : USD 0.6469

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages Datasheet production data Features TAB Order codes V R max. I P DSS DS(on) D TOT 3 3 STF6N62K3 30 W 2 2 1 1 STFI6N62K3 30 W TO-220FP IPAK STI6N62K3 620 V < 1.2 5.5 A 90 W STP6N62K3 90 W TAB 1 2 3 STU6N62K3 90 W TAB IPAK FP 100% avalanche tested 3 3 2 2 Extremely high dv/dt capability 1 1 Gate charge minimized IPAK TO-220 Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram D(2,TAB) Applications Switching applications Description G(1) These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and S(3) high avalanche capability, rendering them suitable AM01476v1 for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STF6N62K3 TO-220FP STFI6N62K3 IPAKFP STI6N62K3 6N62K3 IPAK Tube STP6N62K3 TO-220 STU6N62K3 IPAK August 2012 Doc ID 14676 Rev 4 1/19 This is information on a product in full production. www.st.com 19Contents STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 19 2/19 Doc ID 14676 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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