STP90N6F6 STMicroelectronics

STP90N6F6 N-channel 60 V, 0.0057 typ., 90 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Order code V R max. I P DS DS(on) D TOT STP90N6F6 60 V 0.0063 90 A 136 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Features Table 1: Device summary Order code Marking Package Packaging STP90N6F6 90N6F6 TO-220 Tube March 2015 DocID025190 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STP90N6F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID025190 Rev 3