Product Information

STP85NF55

STP85NF55 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 55 Volt 80 Amp

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

106: USD 1.1509 ea
Line Total: USD 122

1430 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 106  Multiples: 1
Pack Size: 1
Availability Price Quantity
1430 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 106
Multiples : 1

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STP85NF55
STMicroelectronics

106 : USD 1.1509

     
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RoHS - XON
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Continuous Drain Current
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STB85NF55T4, STP85NF55 Datasheet Automotive-grade N-channel 55 V, 6.2 m typ., 80 A, STripFET II Power MOSFETs in DPAK and TO-220 packages Features V R max. I Type DS DS(on) D TAB TAB STB85NF55T4 55 V 8.0 m 80 A STP85NF55 3 1 3 2 D PAK TO-220 2 1 AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested D(2, TAB) Low gate charge Applications Switching applications G(1) Description S(3) These Power MOSFETs have been developed using STMicroelectronics unique AM01475v1 noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STB85NF55T4 STP85NF55 Product summary Order code STB85NF55T4 Marking B85NF55 Package DPAK Packing Tape and reel Order code STP85NF55 Marking P85NF55 Package TO-220 Packing Tube DS2569 - Rev 12 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB85NF55T4, STP85NF55 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 55 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 80 A C (1) I D Drain current (continuous) at T = 100 C 80 A C (2) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C 300 W TOT C Derating factor 2.0 W/C (3) E Single-pulse avalanche energy 980 mJ AS (4) dv/dt Peak diode recovery voltage slope 10 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting T = 25 C, I = 40 A, V = 37.5 V J D DD 4. I 80 A, di/dt 300 A/s, V V , T T SD DD (BR)DSS J JMAX Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb DS2569 - Rev 12 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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